HITACHI HAT2022R-EL Power Field Effect Transistor 30V N-Channel **NEW** Qty.5

Description

*** NEW & ORIGINAL ***  5 Pieces
Mfr Package Description
3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
EU RoHS Compliant
-
Status
In Stock
Configuration
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)
11.0  A
Drain Current-Max (ID)
11.0  A
Drain-source On Resistance-Max
0.025  ohm
DS Breakdown Voltage-Min
30.0  V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e6
Moisture Sensitivity Level
1
Number of Elements
1.0
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150.0  Cel
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5  W
Pulsed Drain Current-Max (IDM)
88.0  A
Qualification Status
Not Qualified
Sub Category
FET General Purpose Power
Surface Mount
YES
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
20
Transistor Application
SWITCHING
Transistor Element Material
SILICON